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Growth of InAs Quantum Dots Using the Strained Superlattices and Their Optical Properties

Jae-Young Leem*, Hyun-Kwang Choi, M. H. Jeon, J. W. Lee and G. S. Cho
Department of Optical Engineering, KR

Keywords: InAs, quantum dots, Photoluminescence, superlattice

we have studied the growth of self-assembled quantum dots (QDs) using Stranski-Krastanow growth mode and strain-reducing layers for long-wavelength applications with narrow linewidth in photoluminescence (PL) emission. InAs QDs were grown on the strained superlattices, GaAs(2nm)/InxGa1-xAs(2nm)10 with x = 0.1, 0.32 and 0.52 and capped with same strained superlattices. Their optical properties related to the integrated PL intensity and peak positions were investigated with different temperature ranging from 11 ~ 325 K. As the In composition of the strained superlattice layer increases, the PL peak energy of the QDs decreases resulting in the redshift in emission wavelength and the PL intensity also decreases indicating the effective strain relaxation caused by the strained superlattice structure. From the results, the luminescence wavelength can be controllably varied in wide range by changing the In content of the external superlattice. The effects of the rapid thermal annealing (RTA) on the structural and optical properties of the QDs with PL measurements were also investigated. While the increase in the integrated PL intensity was observed for the samples annealed at temperature up to 800oC, a decrease in the PL intensity was shown at higher temperatures. The significant narrowing of FWHM and blueshift of the PL peak of the InAs QDs with increase in annealing temperature were observed. From the results, we showed the possibility that this newly proposed structure could be used for the fiber optic communication

NSTI Nanotech 2003 Conference Technical Program Abstract

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