Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2003 NSTI Nanotechnology Conference & Trade Show
Nanotech 2003
BioNano 2003
Index of Authors
2003 Sub Sections
Press Room
NSTI Events
Site Map
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Supporting Organizations
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461

Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode

T. Nakagawa, T. Sekigawa, T. Tsutsumi, E. Suzuki, and H. Koike
Electroinformatics Group, AIST, JP

Keywords: double-gate, MOSFET, modeling

Recently, a double-gate structure has attracted much attention as an emerging device concept. The DG MOSFET is regarded as the most scalable device. Usually the DG MOSFET is supposed to be used as a three-terminal transistor with one common gate. The alternative four-terminal operation mode with the independent front and back gate is promising. It enables dynamic fine-grain Vt control, and analog signal processing by using two gates. To evaluate the merit of these modifications on circuit design, a compact four-terminal DG MOSFET model is strongly needed. We consider fully depleted (FD) DG MOSFET with practical silicon channel thickness that ranges from 20nm down to 3nm. Although the range is not wide, the device physics changes drastically within this range. To make a compact model with these versatile requirements, the double charge-sheet model will be a good start point. In this model, carrier density of two charge sheets are calculated supposing the current which traverses between them is zero. In this poster presentation, we will address the issues on the compact model design of the four-terminal FD DG MOSFETs.

NSTI Nanotech 2003 Conference Technical Program Abstract

Featured Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact