Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2002 NSTI Nanotechnology Conference & Trade Show
Nanotech 2002
2002 Sub Sections
ICCN 2002
MSM 2002
WCM 2002
NSTI Events
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Supporting Organizations
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461

An Introduction to MOS Model 11

Workshop on Compact Modeling Tutorial

R. van Langevelde, A.J. Scholten and D.B.M. Klaassen
Philips Research Laboratories, The Netherlands


MOS Model 11 is the first public-domain surface-potential-based compact MOS model that is available in commercial circuit simulators like Spectre, Hspice and ADS. MOS Model 11 incorporates gate leakage, including bias-dependent source/drain partitioning, and quantum mechanical effects. In a short introduction the difference between threshold-voltage-based compact models and surface-potential-based compact models, like MOS Model 11, is explained. Next the physical effects implemented in MOS Model 11 are briefly reviewed. MOS Model 11 has been developed with special emphasis on i) the symmetry with respect to drain-source interchange and ii) the higher order derivatives of the currents in order to obtain a correct description of the distortion. The resulting expressions for mobility degradation and velocity saturation will also be discussed. In this tutorial special attention will be given to the gate leakage model and the charge (or capacitance) model.

Table of Contents

  1. Introduction
  2. DC-Model
  3. AC-Model
  4. Noise Model
  5. Model Parameters & Extraction
  6. Examples: e.g. RF distortion
Featured Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact