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Nanotech 2000 Technical Program - Monday March 27

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Welcome and introductory remarks, Andreas Wild, Motorola

Grand Ballroom

Keynote lectures

Grand Ballroom
Session chair: Andreas Wild, Motorola
8:30 Automatic Device Design Optimization with TCAD Frameworks
S. Selberherr
Technical University of Vienna, AUSTRIA
9:15 Top Down Design of MEMS
G.K. Fedder
Carnegie Mellon University, USA,


Grand Ballroom Foyer

Process Modeling: Layout, Lithography

Grand Ballroom I
Session chair: Jean-Michel Karam, MemsCap, France
10:20 Automated Mask-Layout and Process Synthesis for MEMS
L. Ma and E.K. Antonsson
California Institute of Technology, USA
10:40 Creation of 3D Surface Models from 2D Layouts for BEM Anaylysis
M. Spasojevic, P. Ljung and M. Bächtold
Coyote Systems, Inc., USA
11:00 Process Simulation for Contact Print Microlithography
A.A. Darhuber, S.M. Miller, S.M. Troian and S. Wagner
Princeton University, USA
11:20 Full-chip Process Simulation for Silicon DRC
E. Sahouria, Y. Granik, N. Cobb and O. Toublan
Mentor Graphics, Corp., USA
11:40 Systematic Design and Optimization of Multi-Material, Multi-Degree-of-Freedom Micro Actuators
O. Sigmund
Technical University of Denmark, DENMARK

Computational Methods for Microfluidics

Grand Ballroom II
Session chair: Narayan R. Aluru, University of Illinois at Urbana-Champaign
10:20 A Fast Stokes Solver for Generalized Flow Problems
W. Ye, X. Wang and J. White
Massachusetts Institute of Technology, USA
10:40 Analysis of Sample Injection and Band-Broadening in Capillary Electrophoresis Microchips
S. Krishnamoorthy and M.G. Giridharan
CFD Research Corp., USA
11:00 Electroosmotic Flow in a Tube or Channel for Non-Negligible Zeta Potentials
S.K. Griffiths and R.H. Nilson
Sandia National Laboratories, USA
11:20 Modeling of Microfluidic Devices Using Scalable Algorithms
L. Stals
Old Dominion University, USA
11:40 A Neural Network Based Macromodel for Microflow Sensors
O. Mikulchenko, A. Rasmussen and K. Mayaram
Washington State University, USA



Process Modeling: Implant, Diffusion

Grand Ballroom I
Session chair: Wolfgang Windl, Motorola
13:20 Robust Ion-Implantation Process Design through Statistical Analysis
C. Sudhama, R. Thoma, M. Morris, J. Christiansen and I-S. Lim
Motorola Digital DNA Labs, USA
13:40 Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo Method
Y. Ban, S. Yoon, O. Kwon and T. Won
Inha University, KOREA
14:00 Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles
L. Ciampolini, M. Ciappa, P. Malberti and W. Fichtner
Swiss Federal Institute of Technology, SWITZERLAND
14:20 Systematic Global Calibration of a Process Simulator
J-H. Lee, K-D. Kim, J-T. Kong, S-W. Lee, Y-W. Kim and D-H. Baek
Samsung Electronics Co.Ltd., KOREA

Computational Materials

Grand Ballroom II
Session chair: Robert Rudd
13:20 Ab initio Molecular Dynamics Simulations of Aluminum Ion Solvation in Water Clusters
M.I. Lubin, E.J. Bylaska and J.H. Weare
University of California, USA
13:40 Simulation of Porous Si and SiOx Layer Growth
V.M. Burlakov, A.P. Sutton, G.A.D. Briggs and Y. Tsukahara
University of Oxford, UNITED KINGDOM
14:00 Simulation Of Point Defect Clustering In Cz-Silicon Wafers On The Cray T3E Scalable Parallel Computer: Application To Oxygen Precipitation
F.S. Karouri, A. Karoui and G.A. Rozgonyi
North Carolina State University, USA
14:20 Heterogeneous Thin Films of Martensitic Materials with Application to Large Strain Microactuators
Y.C. Shu
National Taiwan University, Taiwan, ROC


Grand Ballroom Foyer

Process Modeling: Oxidation, Etch, Metal

Grand Ballroom I
Session chair: Sung-Kie Youn
15:00 Modeling of the Self-Limiting Oxidation for Nanofabrication of Si
Y. Chen
University of California, USA
15:20 On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations
T. Hoffmann, K.F. Dombrowski and V. Senez
15:40 Simulation of Orientation-Dependent Etching of Silicon Using a New Step Flow Model of 3D Structuring
A. Horn, H. Schröder, E. Obermeier and G. Wachutka
Munich University of Technology, GERMANY
16:00 Strength of Nanoscale Copper Connection Under Shear
P. Heino
Tampere University of Technology, FINLAND
16:20 Modeling the Microstructure and Elastic Properties of Complex Materials
A.P. Roberts and E.J. Garboczi
University of Queensland, AUSTRALIA
16:40 Pre-Physical Design Analysis and Optimization of Repeaters Based on Technology Node, Materials, Devices, and Repeater Options
W.T. Lynch

Semiconductor Device Modeling

Grand Ballroom II
Session chair: Andreas Wild, Motorola
15:00 Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions
J. Furlan and Z. Gorup
University of Ljubljana, SLOVENIA
15:20 Optimization of FIBMOSs through 2-D Device Simulations
J. Kang, D.K. Schroder and D.P. Pivin
Arizona State University, USA
15:40 Modelling of the ""Gated-Diode"" Configuration in Bulk MOSFET’s
A. Yip, Y.T. Yeow, G.S. Samudra and C.H. Ling
TECH Semiconductor, SINGAPORE
16:00 Investigation of High Frequency Noise in a SiGe HBT Based on Shockley's Impedance Field Method and the Hydrodynamic Model
S. Decker, B. Neinhus, B. Heinemann, C. Jungemann and B. Meinerzhagen
University of Bremen, GERMANY
16:20 Two-Dimensional MOSFET Dopant Profile by Inverse Modeling via Source/Drain-to-Substrate Capacitance Measurement
C.Y.T. Chiang, Y.T. Yeow and R. Ghodsi
University of Queensland, AUSTRALIA
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