Authors: B. Lussem, M. Tietze, H. Kleemann, A. Fischer, A. Gunther, K. Leo
Affilation: Kent State University, United States
Pages: 60 - 64
Keywords: organic transistors, organic doping, vertical transistors
Organic transistors hold the promise of enabling the field of flexible electronics. However, despite significant progress in the past, the performance and reliability of organic transistors has to be improved further to turn the dream of flexible electronics into reality and to make applications such as smart textiles, flexible displays, or RFID tags commercially available. Two approaches to make organic transistors more reliable and improve their performance are discussed here: Organic doping and vertical organic transistors. We will show that doping can be used to precisely tune the threshold voltage of organic field effect transistors and to reduce gate-bias stress effects (Lüssem et al., Nature Communications 4, 2775, 2013). In particular, transistors with well controllable device characteristics are presented. Design rules are discussed to optimize these transistors, in particular the ON/OFF ratio and the sub-threshold swing. Furthermore, vertical organic transistors can lead to a breakthrough of the technology. It will be discussed that doping can as well be used to improve vertical transistors (Fischer et al. JAP, 111, 044507 (2012), Fischer et al. APL 101, 213303, 2012). These devices reach high driving currents (>1A/cm²) and operate at very low voltages (3V).