Authors: H-T Chang, Y. Li
Affilation: National Chiao Tung University, Taiwan
Pages: 5 - 8
Keywords: randon dopant, fluctuation, multi-channel, gate-all-around, nanowire, field effect transistors
This paper, for the first time, studies the random dopant fluctuation (RDF) in the 10-nm-gate multi-channel gate-all-around nanowire field-effect transistors (FETs). To characterize device’s physical and electrical characteristic fluctuation, a 3D statistically atomistic approach to analyzing random-dopant effects is intensively performed. The key findings of this study indicate an ellipse-shaped gate-all-around nanowire FETs with relatively smaller aspect ratio possess better DC characteristic and good immunity to threshold voltage variability.