Nano Science and Technology Institute
Nanotech 2014 Vol. 2
Nanotech 2014 Vol. 2
Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Chapter 8: WCM - Compact Modeling

Compact Negative Bias Temperature Instability Model for Nanoscale FinFET Reliability Simulation

Authors:C. Zhang, W. Wang, Y. Liu, Y. Ye, W. Zhao, J. He, W. Wu
Affilation:Peking University Shenzhen SOC Key Laboratory, CN
Pages:518 - 520
Keywords:negative bias temperature instability (NBTI), FinFET, nanoscale, R-T theory
Abstract:A compact Negative Bias Temperature Instability (NBTI) model, which is based on a novel Reaction-Trapping (R-T) theory, is proposed to predict the static and dynamic NBTI degradation in nanoscale FinFET reliability simulation. This R-T theory is on the basis of the hypothesis that threshold voltage variation is induced by H atoms captured by either shallow or deep level traps in the gate oxide. The advantage of the novel NBTI model is demonstrated by comparing with the classical Reaction-Diffusion NBTI model. A good match between the proposed NBTI model and the experimental results is obtained in terms of the temperature dependence and the structure effect of nanoscale FinFETs.
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