Nano Science and Technology Institute
Nanotech 2014 Vol. 2
Nanotech 2014 Vol. 2
Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Chapter 8: WCM - Compact Modeling

A Physics Based Potential Model for Cylindrical Surrounding Gate MOSFETs with SiO2- Core Si-Shell Structure

Authors:X. Zhang, J. He, M. Chan, C. Du, Y. Ye, W. Zhao, W. Wu, W. Wang
Affilation:PKU-HKUST ShenZhen-HongKong Institution, CN
Pages:483 - 486
Keywords:analytic model, core/shell, cylindrical surrounding gate MOSFETs (SRGFETs), Poisson–Boltzmann equation, Pao-Sah’s dual integral
Abstract:A physics based potential model for intrinsic long-channel cylindrical surrounding gate MOSFETs with SiO2 -core Si-Shell structure is presented in this paper. The accurate potential solution of Poisson’s equation in a cylindrical coordinate system is first derived under the gradual channel approximation. The drain-current equation based on drift-diffusion mechanism is obtained from Pao- Sah’s dual integral, which is expressed as a function of intermediate vabible. The model is continuous both from sub-threshold to strong inversion region and from the linear to the saturation region. The model has been extensively verified by 3D numerical simulations with a wide range of geometrical parameters.
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