Nano Science and Technology Institute
Nanotech 2014 Vol. 2
Nanotech 2014 Vol. 2
Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Chapter 8: WCM - Compact Modeling

InGaAs FinFET Modeling Using Industry Standard Compact Model BSIM-CMG

Authors:S. Khandelwal, J.P. Duarte, N. Paydavosi, Y.S. Chauhan, J.J. Gu, M. Si, P.D. Ye, C. Hu
Affilation:University of California, Berkeley, US
Pages:475 - 478
Keywords:InGaAs, FinFET, compact models
Abstract:In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility degradation severely limit the performance of these devices
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