Nano Science and Technology Institute
Nanotech 2014 Vol. 2
Nanotech 2014 Vol. 2
Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
 
Chapter 8: WCM - Compact Modeling
 

Compact Model Characteristics for Generic MIS-HEMTs

Authors:X. Zhou, S.B. Chiah, B. Syamal, H.T. Zhou, A. Ajaykumar, X. Liu
Affilation:Nanyang Technological University, SG
Pages:495 - 498
Keywords:2-D electron gas (2DEG), compact model (CM), high electron-mobility transistor (HEMT), unified regional modeling (URM), Xsim
Abstract:III-V channel field-effect transistors (FETs), such as metal–insulator–semiconductor high electron-mobility transistors (MIS-HEMTs), have emerged as promising candidates for future generation high-frequency, high-voltage, and high-power applications. Development of a compact model for generic HEMTs in III-V/Si co-integrated hybrid circuit design is becoming an urgent need for semiconductor industry. This paper presents device characteristics as modeled by the compact model (Xsim) for generic MIS-HEMTs. The model is based on unified regional modeling (URM) of the 2-dimensional electron gas (2DEG) charge density, including the two lowest sub-bands of the triangular well in the strong-inversion region, and extending to the moderate-inversion and subthreshold regions in a single-piece formulation. The 2DEG charge density model is adopted in the surface-potential-based current/charge model for conventional bulk/SOI/multigate MOSFETs, which makes it compatible and scalable for future III-V/Si co-integrated technologies. HEMT-specific features are also discussed, such as nonlinear source/drain access resistances, current-collapse, self-heating, parallel-channel, and quasi-ballistic effects.
ISBN:978-1-4822-5827-1
Pages:570
Hardcopy:$209.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map