Massoubre D., Wang L., Chai J., Walker G., Hold L., Lobino M., Dimitriev S., Iacopi A.
Griffith University, AU
Keywords: 3C-SiC, DBR on Si, GaN, LED on Si, photonic cristal, photonic.
We present our recent progress in the hetero-epitaxial growth of single-crystalline cubic silicon carbide (3C-SiC) on large silicon (Si) wafer and its use for photonic applications. Single-crystalline 3C-SiC thin-film on Si opens new opportunities to develop photonic applications on Si, either as a growth template to integrate efficient gallium nitride (GaN)-based optoelectronic devices on Si, as a photonic material to perform ultra-fast (~GHz)electro-optical manipulation of light at telecom wavelengths or even for quantum photonic. We demonstrate the fabrication of 3C-SiC-based DBR on large Si wafer, as well as the growth of GaN-LED on SiC-on-Si.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Published: June 15, 2014
Pages: 416 - 419
Industry sector: Advanced Materials & Manufacturing
Topic: Photonic Materials & Devices
ISBN: 978-1-4822-5827-1