Nano Science and Technology Institute
Nanotech 2014 Vol. 2
Nanotech 2014 Vol. 2
Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics
Chapter 1: MEMS & NEMS Devices & Applications

TCAD Thermal Analysis of Gate Workfunction Engineered Recessed Channel MOSFET

Authors:G. Arora, M. Monika, R. Chaujar
Affilation:Delhi Technological University, IN
Pages:85 - 88
Keywords:thermal analysis, recessed channel, dual metal gate, gate work function engineering, atlas, modelling, simulation, lattice temperature, heat capacity, heat conductivity
Abstract:This paper discusses the thermal analysis of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET involving an RC and GEWE design integrated onto a conventional MOSFET. Furthermore, it focuses on the comparative study of conventional MOSFET with GEWE-RC MOSFET in terms of various thermal parameters such as lattice temperature, heat conductivity, heat capacity and impact generation rate. This paper thus optimizes and predicts the feasibility of a novel design, i.e., GEWE-RC MOSFET for high-performance applications where self-heating effects and thermal behavior is a major concern. TCAD simulations using ATLAS demonstrate that the GEWE-RC MOSFET structure exhibits significantly improved thermal performance, where low power consumption is required and in digital logic and memory applications where fast switching action of MOS is needed.
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