Nano Science and Technology Institute
Nanotech 2014 Vol. 1
Nanotech 2014 Vol. 1
Nanotechnology 2014: Graphene, CNTs, Particles, Films & Composites
Chapter 6: Nanoscale Materials Characterization

Converting Dimensions: A Facile and High-Yield Route for Getting Sub-100 nm Silicon Nanowires

Authors:S.H. Lee
Affilation:Yonsei University, KR
Pages:509 - 512
Keywords:silicon nanowire, metal-assisted chemical etching, sputtering, rapid thermal annealing
Abstract:For synthesizing uniform sub-100-nm Si nanowires (NWs), we introduce a metal-assisted chemical etching (MCE)-based facile and high-yield route, employing simple thermal annealing and vacuum deposition processes. Under rapid thermal annealing, an ultrathin Ag film on a Si substrate is self-organized into Ag nanoparticles, which are used for making Si nanoholes through a short MCE process. After the sputter deposition of Ag on the caved Si substrate with nanoholes, a Ag nanomesh is obtained. Finally, with the nanomesh as an etching mask, Si NWs are successfully produced through a second MCE process.
Order:Mail/Fax Form
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map