Nano Science and Technology Institute
Nanotech 2013 Vol. 2
Nanotech 2013 Vol. 2
Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 7: Modeling & Simulation of Microsystems

Compact Modeling of Parameter Variations of Nanoscale CMOS due to Random Dopant Fluctuation

Authors:Y. Ye, Y. Zhu, H. He, J. Mei, Y. Cao, J. He
Affilation:PKU-HKUST Shenzhen-Hongkong Institution, CN
Pages:552 - 555
Keywords:random dopant fluctuation (RDF), statistical compact modeling, nanoscale CMOS circuit
Abstract:In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the variability modeling taking both threshold voltage (Vth) and mobility (μ) into account is presented. The difference between the proposed method and the traditional approach using only Vth variation for RDF is compared and discussed.
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