Authors: Y. Ye, Y. Zhu, H. He, J. Mei, Y. Cao, J. He
Affilation: PKU-HKUST Shenzhen-Hongkong Institution, China
Pages: 552 - 555
Keywords: random dopant fluctuation (RDF), statistical compact modeling, nanoscale CMOS circuit
In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the variability modeling taking both threshold voltage (Vth) and mobility (μ) into account is presented. The difference between the proposed method and the traditional approach using only Vth variation for RDF is compared and discussed.