Nano Science and Technology Institute
Nanotech 2013 Vol. 2
Nanotech 2013 Vol. 2
Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 7: Modeling & Simulation of Microsystems

Thermal Coupling in Technologies Based on Tri-gate Transistors

Authors:M. Janicki, P. Zajac, M. Szermer, A. Napieralski
Affilation:Lodz University of Technology, PL
Pages:520 - 523
Keywords:tri-gate transistors, thermal simulation, many core processors, technology scaling
Abstract:This paper presents the analyses of static and dynamic thermal coupling among microsystem components for technologies based on tri-gate transistors. Simulations were carried out using Green’s function thermal solver based on power trace data computed from BSIM-CGM predictive technology models. The most important conlusion is that, unlike in the case of standard planar technologies, when scaling down the tri-gate devices the thermal coupling between particular modules might decrease what could be beneficial for performance improvement. The final version of the paper will validate simulation results with measurements of a thermal test ASIC.
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