Nano Science and Technology Institute
Nanotech 2013 Vol. 2
Nanotech 2013 Vol. 2
Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 7: Modeling & Simulation of Microsystems

Junctionless Nanowire MOSFET with Dynamic Threshold Voltage Operation Methodology

Authors:J. Mei, A. Zhang, C. Yu, Y. Ye, H. Wang, W. Deng, J. He
Affilation:PKU-HKUST Shenzhen-Hongkong Institution, CN
Pages:516 - 519
Keywords:junctionless, nanowire, adjust gate, dynamic threshold voltage
Abstract:In this paper, a junctionless nanowire MOSFET with the dynamic threshold voltage operation methodology (DT-JNT) is proposed and its characteristics are studied comparing with those of a conventional junctionless nanowire transistor (JNT) and a double-gate junctionless transistor (DG-JT) by TCAD simulations. The numerical results demonstrate that the DT-JNT shows a series of desirable features, e.g., integrating the advantages of the junctionless transistor, such as easy-to-manufacture, cost effective, etc and possessing dynamic threshold voltage, thus it enhances applicability to various circuit applications. In addition, when it is used by connect the control gate and the adjust gate together, its ON/OFF current ratio is enhanced. Overall, it holds the potential to be further used in the next generation nanoscale circuit design.
Order:Mail/Fax Form
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map