Authors: A.C.E. Chia, R.R. LaPierre
Affilation: McMaster University, Canada
Pages: 25 - 28
Keywords: nanowire, surface depletion, passivation, solar cell, photovoltaic, surface recombination
Fabrication, electrical characterization and analytical modeling of an AlInP-passivated GaAs NW ensemble is presented. Novel processing steps were used to fabricate NW ensemble devices which were subsequently characterized electrically and fit with an analytical model, showing a 48% reduction in interface state density and impressive four order of magnitude increase in effective carrier concentration of the NWs, rivaling the performance of other passivation schemes reported in literature. This is the first known report of surface passivation of a NW ensemble device with a III-V shell and demonstrated by electrical characterization of a whole ensemble of NWs.