Nano Science and Technology Institute
Nanotech 2013 Vol. 1
Nanotech 2013 Vol. 1
Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)
Chapter 1: Nanoscale Materials Characterization

Modeling and Fabrication of Quantum Dot Channel (QDC) Field-Effect Transistors Incorporating Quantum Dot Gate

Authors:J. Kondo
Affilation:University of Connecticut, US
Pages:132 - 135
Keywords:quantum dot gate (QDG), quantum dot channel (QDC), quantum dot superlattice (QDSL), multi-valued logic (MVL)
Abstract:Quantum dot gate (QDG) field effect transistors (FET) have shown three-state transfer characteristics. Quantum dot channel (QDC) field-effect transistors (FET) have exhibited multi-state ID-VG characteristics. This paper aims at studying the effect of incorporating cladded quantum dot layers in the gate region of QDC-FET. Their operations are explained by carrier transport in narrow energy mini-bands which are manifested in a quantum dot superlattice (QDSL) transport channel. QDSL is formed by an array of cladded quantum dots (such as SiOx-Si and GeOx-Ge). Multi-state FETs are needed in multi-valued logic (MVL) that can reduce the number of gates and transistors in digital circuits. This paper describes modeling and fabrication of QDC-QDG FET which consists of two layers of cladded quantum dots in the gate as well as in the channel regions.
Order:Mail/Fax Form
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map