Nano Science and Technology Institute
Nanotech 2013 Vol. 1
Nanotech 2013 Vol. 1
Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)
Chapter 1: Nanoscale Materials Characterization

Narrow Fin Width Effect of HKMG Bulk FinFET Devices

Authors:C.-H. Chen, Y. Li, C.-Y. Chen, Y.-Y. Chen, S.-C. Hsu, W.-T. Huang, C.-M. Yang, L.-W. Chen, S.-Y. Chu
Affilation:National Chiao Tung University, TW
Pages:147 - 150
Keywords:narrow fin width, HKMG, bulk FinFET, gate capacitance, flat band voltage shift, substrate resistance
Abstract:In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow fin width possesses worse flat band voltage shift and large variation of gate capacitance owing to increased substrate resistance.
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