Nano Science and Technology Institute
Nanotech 2013 Vol. 1
Nanotech 2013 Vol. 1
Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)
Chapter 1: Nanoscale Materials Characterization

A Cathodoluminescence Study of InGaN/GaN Multiple Quantum Well and N type GaN Structures

Authors:F. Ramos, D. Byrnes, F. Lu
Affilation:Veeco Process Equipment, Inc, US
Pages:143 - 146
Keywords:cathodoluminescence, SEM, InGaN MQW, V-pit
Abstract:A systematic study of the V-pits in 4 periods of InGaN/GaN multiple quantum well structure (MQW) and defects in n type GaN is investigated by room temperature cathodoluminescence. These MQWs were fabricated on a sapphire substrate by using metal organic chemical vapor deposition. The crystal quality is affected by the lattice mismatch between GaN and the sapphire substrates which results in the generation of a high threading dislocation (TD) density in GaN. Ii is believed that V-defects originate at the InGaN/GaN interface and may cause non-radiative recombination centers thus reducing the quantum efficiency of the structure. The optical emission from these defects is discussed in this paper. The density of V-defects observed in monochromatic CL images is compared to the TD density in n type GaN sample.
Order:Mail/Fax Form
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map