Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
 
Chapter 9: Modeling & Simulation at the Nanoscale
 

Analytical Drain Current Model for Damaged Gate All Around (GAA) MOSFET Including Quantum and Velocity Overshoot Effects

Authors:R. Gautam, M. Saxena, R.S. Gupta, M. Gupta
Affilation:University of Delhi, South Campus, IN
Pages:716 - 719
Keywords:ATLAS-3D, GAA MOSFET, hot carrier effect, interface traps, localised charges
Abstract:The Cylindrical Gate All Around (GAA) Nanowire MOSFET exhibits strong drive currents and reduced short channel effects due to enhanced gate control and high surface quality of NW channels [1]. Apart from short channel immunity, device reliability is a major issue for optimum device performance. In this paper an analytical drain current model has been developed for Cylindrical Gate All Around (GAA) Si Nanowire MOSFET having interface fixed charges due to hot carrier/process/stress/radiation induced damage. The model also includes quantum and velocity overshoot effects. The effect of interface fixed charges on threshold voltage and drain current has been studied quantitatively and threshold voltage shift and change in off current are used to extract the density of fixed charges present at the Si-SiO2 interface of the damaged device. Various models including CVT mobility model, SRH recombination model, BQP model and EBT model are used to calibrate simulation results with experimental results. Localised charges at the Si-SiO2 interface cause additional band bending under the gate, which in turn causes change in flat band voltage in the damaged device. Results show that device performance degradation due to fixed charges is more severe for device having thicker silicon body and thick insulating oxide.
ISBN:978-1-4665-6275-2
Pages:878
Hardcopy:$209.95
 
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