Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 8: Modeling & Simulation of Microsystems

Simulation of Removal of Surface-State-Related Lag and Current Slump in GaAs FETs

Authors:H. Hafiz, M. Kumeno, K. Horio
Affilation:Shibaura Institute of Technology, JP
Pages:582 - 585
Keywords:GaAs FET, field plate, current slump, surface state, drain lag, gate lag
Abstract:Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.
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