Simulation of Removal of Surface-State-Related Lag and Current Slump in GaAs FETs

	Nanotech 2012 Vol. 2 Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2) Chapter 8: Modeling & Simulation of Microsystems
	Simulation of Removal of Surface-State-Related Lag and Current Slump in GaAs FETs
Authors:	H. Hafiz, M. Kumeno, K. Horio
Affilation:	Shibaura Institute of Technology, JP
Pages:	582 - 585
Keywords:	GaAs FET, field plate, current slump, surface state, drain lag, gate lag
Abstract:	Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.
ISBN:	978-1-4665-6275-2
Pages:	878
Hardcopy:	$209.95

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