Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Modeling & Simulation of Microsystems Chapter 8

Switching and Release Dynamics of an Electrostatically Actuated MEMS Switch under the influence of Squeeze-film Damping

Authors: S. Shekhar, K.J. Vinoy, G.K. Ananthasuresh

Affilation: Indian Institute of Science, India

Pages: 625 - 628

Keywords: RF MEMS switch, switching speed, pull-in time, frequency pull-in effect, SOI MUMPs

Abstract:
This paper reports analytical modeling, simulation and experimental validation for switching and release times of an electrostatically actuated micromachined switch. Presented work is an extension of our earlier work [1] that analytically argued, and numerically and experimentally demonstrated, why pull-in time is larger that pull-up time when the actuation voltage is less than twice of the pull-in voltage. In this paper, switching dynamics is investigated under the influence of squeeze-film damping. Tests were performed on SOI (silicon-on-insulator) based parallel beams structures.Typical voltage requirement for actuation is in the range of 10-30 V. All the experiments were performed in normal atmospheric pressure. Measurement results confirm that the quality factor Q has appreciable effect on the release time compared to the switching time. The quality factor Q is extracted from the response measurement and compared with the ANSYS simulation result. In addition, the dynamic pull-in effect has also been studied and reported in this paper. A contribution of this work includes the effect of various phenomena such as squeeze-film damping, dynamic pull-in, and frequency pull-in effects on the switching dynamics of a MEMS switch.


ISBN: 978-1-4665-6275-2
Pages: 878
Hardcopy: $209.95