Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 8: Modeling & Simulation of Microsystems

Electromechanical response of high frequency silicon nanowire resonators:simulation and measurements

Authors:A. Koumela, D. Mercier, C. Marcoux, S.T. Purcell, S. Hentz, L. Duraffourg
Affilation:CEA, LETI, FR
Pages:590 - 593
Keywords:NEMS, MEMS, Si nanowire
Abstract:Electromechanical models of nano-electromechanical devices are usually implemented with specifically developed mathematical software and these models are not easily compatible with circuit simulation software. However, in order to use a nano-device as a sensor, a specific electrical circuit needs to be designed and an equivalent electrical model of the device is needed. Usually, the electrical model used is a RLC circuit which does not account for the mechanical behaviour of the device or which gives an electrical response for a known mechanical state. In this paper, we present an electromechanical model for silicon nanowire resonators (SNWR) with piezoresistive detection and electrostatic actuation. The model is very easy to implement in commercial circuit software and permits to simulate accurately and simultaneously the mechanical and the electrical response.
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