Authors: R. Dewanto, Z. Hu, B. Gallacher, J. Hedley
Affilation: Newcastle University, United Kingdom
Pages: 443 - 446
Keywords: reliability, characterisation, Raman spectroscopy
This paper proposes an extension and improvement to reliability predictions in single-crystal silicon MEMS by utilizing dynamic Raman spectroscopy to allow the gathering process of Weibull fracture test data to be done directly on devices thereby taking account of actual geometrical tolerances, dynamic load conditions and effects from the microfabrication process. Acquiring this fracture data on devices will improve reliability prediction accuracy by reducing the influence of fracture size effects. The ability of Raman spectroscopy to directly measure strain on a device surface can also eliminate inaccuracy of FE strain determination because of inaccurate micromachined structures dimensional input to FE model. The technique also simplifies the frequently found time consuming methodology of preparations of micron-sized specimen fracture test pieces.