 | Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 6: Micro & Nano Reliability |
| - | Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability |
| | H. He, C. Ma, C. Wang, A. Zhang, J. He |
| | Peking Univeristy, CN |
| - | Functional Performance of Microfluidic On-Board Pumps and Valves with Various Actuation Protocols |
| | J. Podczeviensky, J. McDowell, L. Levine |
| | ALine, Inc., US |
| - | Shock Testing of Free Standing Silicon-Nitride and Beryllium Membranes |
| | D. Brough, L. Barrett, R. Vanfleet, R. Davis, S. Liddiard, S. Cornaby, M. Coffin |
| | Brigham Young University, US |
| - | Nanoscale deformation analysis for fracture mechanical evaluation of interface cracks in electronic packages. |
| | J. Keller, M. Schulz, R. Mrossko, B. Wunderle, B. Michel |
| | AMIC Angwandte Micro-Messtechnik GmbH, DE |
| - | Reliability Prediction of Single-Crystal Silicon MEMS Using Dynamic Raman Spectroscopy |
| | R. Dewanto, Z. Hu, B. Gallacher, J. Hedley |
| | Newcastle University, UK |
| - | Detecting Defects over the Whole Surface of Wafer by Non-destructive and Non-contact Pulse Photoconductivity Method (PPCM) |
| | J. Ndagijimana, Y. Soh, H. Kubota, K. Kobayashi |
| | Kumamoto University, JP |
| - | Experimental analysis of the MEMS Capacitive accelerometer’s shock resistibility |
| | Y. Tao, Y. Liu, J. Dong |
| | Tsinghua University, CN |
| - | Impact of Channel Length and Gate Width of a N-MOSFET Device on the Threshold Voltage and its Fluctuations in Presence of Random Channel Dopants and Random Interface Trap: A 3D Ensemble Monte Carlo Stud |
| | N. Ashraf, S. Joshi, D. Vasileska |
| | ASU, US |
| ISBN: | 978-1-4665-6275-2 |
| Pages: | 878 |
| Hardcopy: | $209.95 |
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| Order: | Mail/Fax Form |
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