Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 2: Packaging, Compound Semiconductors, Power Electronics

Low frequencies anomalies in GaAs FETs

Authors:M.A. Iqbal
Affilation:University of the Punjab, PK
Pages:83 - 86
Keywords:traps, noise, DLTS, dispersion, transients
Abstract:The activation energy and capture cross section of the traps founds in GaAs field Effect transistors (GaAs FETS) have been measured both in ohmic and saturation region. A variety of transients found using frequency dispersion, generation recombination noise techniques and DLTS techniques. The measure properties indicate that thermal emission from these traps is not a simple exponential. The transient differ from one trap to another and the location of each traps are influenced by the device structure.
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