Authors: M.A. Iqbal
Affilation: University of the Punjab, Pakistan
Pages: 83 - 86
Keywords: traps, noise, DLTS, dispersion, transients
The activation energy and capture cross section of the traps founds in GaAs field Effect transistors (GaAs FETS) have been measured both in ohmic and saturation region. A variety of transients found using frequency dispersion, generation recombination noise techniques and DLTS techniques. The measure properties indicate that thermal emission from these traps is not a simple exponential. The transient differ from one trap to another and the location of each traps are influenced by the device structure.