Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Compact Modeling Chapter 10

Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates

Authors: P.K. Thakur, S. Mahapatra

Affilation: Indian Institute of Science Bangalore, India

Pages: 766 - 769

Keywords: compact modeling, MOS capacitors, doubel gate MOSFETs, varactors

Abstract:
This paper, for the first time, explores the charcatersictics of MOS capacitor controlled by independent double gates by numerical simulation and analytical modeling for its possible use in RF circuit design as a varactor. By numerical simulation it is shown how the quasi-static and non-quasi-static characteristics of the first gate capacitance could be tuned by the second gate biases. Effect of body doping and energy quantization are also discussed in this regard. A semi-empirical quasi-static model is also developed by using the existing incomplete Poisson solution of independent double gate transistors. Proposed model, which is valid from accumulation to inversion, is shown to have excellent agreement with numerical simulation for practical bias conditions.


ISBN: 978-1-4665-6275-2
Pages: 878
Hardcopy: $209.95