Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 10: Compact Modeling

Modeling of Chain History Effect based on HiSIM-SOI

Authors:Y. Fukunaga, M. Miyake, A. Toda, K. Kikuchihara, S. Baba, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
Affilation:Hiroshima university, JP
Pages:788 - 791
Keywords:SOI-MOSFET, history effect, chain history effect, charge strage
Abstract:SOI-MOSFET is considered as a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect and its high driving capability. However, it is known that the history effect prevents the further improvement of the device switching speed. Here we investigate the history effect under the dynamic operating condition, and develop a compact model applicable for detailed analysis. The special focus is given on modeling the chain history effect.
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