Model the AlGaN/GaN High Electron Mobility Transistors

	Nanotech 2012 Vol. 2 Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2) Chapter 10: Compact Modeling
	Model the AlGaN/GaN High Electron Mobility Transistors
Authors:	Y. Wang
Affilation:	Tsnghua University, CN
Pages:	738 - 743
Keywords:	GaN HEMT, compact model
Abstract:	We developed a set of physics-based compact model of GaN HEMT for RF and high power applications. The model includes close-formed I-V, the C-V characteristics, high frequency noise characteristics, self heating effect, small signal and large signal model. This model shows good agreement with the experimental data and has two-order continuity. The models can be implemented in commercial circuit simulator and is easy to be utilized for correlative circuits design.
ISBN:	978-1-4665-6275-2
Pages:	878
Hardcopy:	$209.95

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