Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Compact Modeling Chapter 10

Model the AlGaN/GaN High Electron Mobility Transistors

Authors: Y. Wang

Affilation: Tsnghua University, China

Pages: 738 - 743

Keywords: GaN HEMT, compact model

Abstract:
We developed a set of physics-based compact model of GaN HEMT for RF and high power applications. The model includes close-formed I-V, the C-V characteristics, high frequency noise characteristics, self heating effect, small signal and large signal model. This model shows good agreement with the experimental data and has two-order continuity. The models can be implemented in commercial circuit simulator and is easy to be utilized for correlative circuits design.


ISBN: 978-1-4665-6275-2
Pages: 878
Hardcopy: $209.95

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