Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 10: Compact Modeling

Model the AlGaN/GaN High Electron Mobility Transistors

Authors:Y. Wang
Affilation:Tsnghua University, CN
Pages:738 - 743
Keywords:GaN HEMT, compact model
Abstract:We developed a set of physics-based compact model of GaN HEMT for RF and high power applications. The model includes close-formed I-V, the C-V characteristics, high frequency noise characteristics, self heating effect, small signal and large signal model. This model shows good agreement with the experimental data and has two-order continuity. The models can be implemented in commercial circuit simulator and is easy to be utilized for correlative circuits design.
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