Authors: J. Zhang, J. He, Y. Ye, H. He, M. Chan
Affilation: Peking University, China
Pages: 800 - 803
Keywords: SOI-MOSFET, non-quasi-static effect, high frequency, transient effect, compact model, circuit simulation
A non-quasi-static (NQS) transient model for SOI MOSFETs is presented based on charge based dc model which is extensively verified with various structure parameters. From the inversion charge and current-continuity equation, the partial differential equation on inversion charge is derived and solved using spline collection method. With the non-quasi-static inversion charge distribution, the terminal currents in rapid transient analysis are obtained and have good agreements with two-dimension numerical simulation. The variation of NQS effect coming from the unique silicon-on-insulator structure is also analyzed.