Field-Based 3D Capacitance Modeling for sub-45-nm On-Chip Interconnect

Zhang A., Zhao W., Ye Y., He J., Chen A., Chan M.
Beijing University of Aeronautics and Astronautics, CN

Keywords: capacitance modeling, electric field, fringe-capacitance, Interconnect, terminal capacitance

Considering both two-dimensional and three-dimensional single wire above plate, the proposed method decomposes the electric field into various regions and gives solutions for each part. The total ground capacitance is the summation of all components. The solution can be easily extended to the case of two parallel wires. Its physical base minimizes the complexity and error in a traditional model fitting process. The new compact model accurately predicts the capacitance value, compared to the COMSOL simulations, for not only the nominal wire dimensions from the latest ITRS updates, but also a wide range of other back-end-of-the-line dimensions.

PDF of paper:

Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 804 - 808
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4665-6275-2