Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 10: Compact Modeling

On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling

Authors:X. Guan, S. Yu, H.-S.P. Wong
Affilation:Stanford University, US
Pages:815 - 820
Keywords:resistive switching, memory, hafnium oxide, variation
Abstract:The trap-assisted conduction and filamentary switching mechanisms of the HfOx based resistive memory are studied. A numerical simulator is developed to reproduce the experimental I-V curves. Comparison with experiments shows that the cycle-to-cycle variation in the RRAM is mainly due to the variation in the gap distance between the filament tips and the electrode. A set of analytical equations suitable for compact modeling is then derived to capture the switching behavior of metal oxide-based RRAM (OxRRAM). Through the introduction of random perturbations of the gap size, the model successfully reproduces the measured resistance variation of the multi-level RRAM cell.
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