Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 10: Compact Modeling

Unified Regional Approach to High Temperature SOI DC/AC Modeling

Authors:S.B. Chiah, X. Zhou, Z. Chen, H.M. Chen
Affilation:Nanyang Technological University, SG
Pages:796 - 799
Keywords:SOI, unification
Abstract:This paper extends the recent model development [1] to include temperature effect in a range from room temperature to 300C. The extraction of the temperature coefficients used in the model and the prediction of the model accuracy to the measurement data are included in this paper. It has been indentified by Shucair [3], Prijic et al. [4] and further commented by Eman et al. [2] that a Zero-Temperature-Coefficient (ZTC) point of a MOSFET in the linear operating region is a value of Vg that the reduction of threshold voltage due to the higher operating temperature is counter-balanced by the reduction of the mobility. The reduction of threshold voltage at increasing temperature with missing mobility reduction effect is indicated. Together with our temperature-dependent mobility formulation with two temperature coefficients, which are extracted from three linear region IdsVgs measurement data at nominal, mid and high temperatures, a ZTC point in a range of temperature can be shown. The model prediction to the DC measurement and AC MEDICI data are shown.
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