Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

	Nanotech 2012 Vol. 2 Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2) Chapter 10: Compact Modeling
	Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
Authors:	T. Iizuka, K. Fukushima, A. Tanaka, M. Ueno, M. Miura-Mattausch
Affilation:	Hiroshima University, JP
Pages:	748 - 751
Keywords:	HV-MOSFETs, compact model, TCAD
Abstract:	A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared with planar HV-MOSFET. As for planar HV-MOSFETs, regardless of DDMOS or LDMOS, HiSIM_HV has begun to serve design community as a world recognized model. In this work, the benefit of HiSIM_HV was extended to another class of HV device, i.e., trench-gate type HV-MOSFET, while the framework of the HiSIM_HV model formulation was kept intact as much as possible. The modified code successfully match TCAD-generated measurement data.
ISBN:	978-1-4665-6275-2
Pages:	878
Hardcopy:	$209.95

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