Authors: F. Ueno, A. Tanaka, M. Miyake, T. Iizuka, T. Yamamoto, H. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch
Affilation: Hiroshima University, Japan
Pages: 752 - 755
Keywords: HV-MOSFET, DMOS, current flow, 2D-effect
High-voltage devices are utilized for a variety of applications, with application voltages ranging from a few volts to a few hundred volts. To develop efficient circuits for the variety of applications, accurate modeling of the basic device is the key. Here our purpose is to develop a compact model for the DMOS structure which considers the vertical 2D current flow and to implement it into HiSIM_HV. The accuracy of the developed model is verified.