Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow

	Nanotech 2012 Vol. 2 Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2) Chapter 10: Compact Modeling
	Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow
Authors:	F. Ueno, A. Tanaka, M. Miyake, T. Iizuka, T. Yamamoto, H. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch
Affilation:	Hiroshima University, JP
Pages:	752 - 755
Keywords:	HV-MOSFET, DMOS, current flow, 2D-effect
Abstract:	High-voltage devices are utilized for a variety of applications, with application voltages ranging from a few volts to a few hundred volts. To develop efficient circuits for the variety of applications, accurate modeling of the basic device is the key. Here our purpose is to develop a compact model for the DMOS structure which considers the vertical 2D current flow and to implement it into HiSIM_HV. The accuracy of the developed model is verified.
ISBN:	978-1-4665-6275-2
Pages:	878
Hardcopy:	$209.95

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