Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 10: Compact Modeling

Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control

Authors:S. Khandelwal, Y.S. Chauhan, M.A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu
Affilation:Norwegian University of Science & Technlogy, NO
Pages:780 - 783
Keywords:UTBSOI, FDSOI, surface-potential
Abstract:An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated surface-potential is in excellent agreement with the numerical solution with an accuracy of the order of nano-volts.The method can be used to develop complete surface-potential based compact model for these devices.
Order:Mail/Fax Form
© 2015 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map