 | Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 10: Compact Modeling |
Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control | |
| Authors: | S. Khandelwal, Y.S. Chauhan, M.A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu |
| Affilation: | Norwegian University of Science & Technlogy, NO |
| Pages: | 780 - 783 |
| Keywords: | UTBSOI, FDSOI, surface-potential |
| Abstract: | An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated surface-potential is in excellent agreement with the numerical solution with an accuracy of the order of nano-volts.The method can be used to develop complete surface-potential based compact model for these devices. |
| ISBN: | 978-1-4665-6275-2 |
| Pages: | 878 |
| Hardcopy: | $209.95 |
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