Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Compact Modeling Chapter 10

BSIM6: Symmetric Bulk MOSFET Model
Y.S. Chauhan, M.A. Karim, S. Venugopalan, S. Khandelwal, A. Niknejad, C. Hu
University of California, Berkeley, US

Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model
C.C. Enz, A. Mangla, M.-A. Chalkiadaki
Ecole Polytechnique Fédérale de Lausanne (EPFL), CH

An analytical 2DEG model considering the two lowest subbands
J. Zhang, X. Zhou
NTU singapore, SG

Model the AlGaN/GaN High Electron Mobility Transistors
Y. Wang
Tsnghua University, CN

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices
S. Khandelwal, T.A. Fjeldly
NTNU, NO

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
T. Iizuka, K. Fukushima, A. Tanaka, M. Ueno, M. Miura-Mattausch
Hiroshima University, JP

Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow
F. Ueno, A. Tanaka, M. Miyake, T. Iizuka, T. Yamamoto, H. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch
Hiroshima University, JP

Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles
T.A. Fjeldly, U. Monga
Norwegian University of Science and Technology, NO

Discreteness and Distribution of Drain Currents in FinFETs
N. Lu
IBM, US

Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates
P.K. Thakur, S. Mahapatra
Indian Institute of Science Bangalore, IN

Critical review of CNTFET compact models
M. Claus, M. Haferlach, D. Gross, M. Schröter
Technische Universität Dresden, DE

Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor
R. Narang, M. Saxena, R.S. Gupta, M. Gupta
University of Delhi South Campus, IN

Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control
S. Khandelwal, Y.S. Chauhan, M.A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu
Norwegian University of Science & Technlogy, NO

A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs
X. Zhou, S.B. Chiah
Nanyang Technological University, SG

Modeling of Chain History Effect based on HiSIM-SOI
Y. Fukunaga, M. Miyake, A. Toda, K. Kikuchihara, S. Baba, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
Hiroshima university, JP

HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX
M. Miura-Mattausch, H. Kikuchihara, U. Feldmann, T. Nakagawa, M. Miyake, T. Iizuka, H.J. Mattausch
Hiroshima University, JP

Unified Regional Approach to High Temperature SOI DC/AC Modeling
S.B. Chiah, X. Zhou, Z. Chen, H.M. Chen
Nanyang Technological University, SG

A Charge Based Non-Quasi-Static Transient Model for SOI MOSFETs
J. Zhang, J. He, Y. Ye, H. He, M. Chan
Peking University, CN

Field-Based 3D Capacitance Modeling for sub-45-nm On-Chip Interconnect
A. Zhang, W. Zhao, Y. Ye, J. He, A. Chen, M. Chan
Beijing University of Aeronautics and Astronautics, CN

Leakage current in HfO2 stacks: from physical to compact modeling
L. Larcher, A. Padovani, P. Pavan
Università di Modena e Reggio Emilia, IT

On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling
X. Guan, S. Yu, H.-S.P. Wong
Stanford University, US

Correlated statistical SPICE models for High-Voltage LDMOS Transistors based on TCAD statistics
E. Seebacher, A. Steinmair
austriamicrosystemsAG, AT

A Fully Automated Method to Create Monte-Carlo MOSFET Model Libraries for Statistical Circuit Simulations
J. Wang, H. Trombley, J. Watts, M. Randall, R. Wachnik
IBM Semiconductor Research and Development Center, US

Understanding and Modeling Quasi-Static Capacitance-Voltage Characteristics of Organic Thin-Film Transistors
C. Ucurum, H. Goebel
Helmut Schmidt University - University of the Federal Armed Forces Hamburg, DE

Boundary Condition Independence of Cauer RC Ladder Compact Thermal Models
M. Janicki, T. Torzewicz, Z. Kulesza, A. Napieralski
Technical University of Lodz, PL

i-MOS: A Platform for Compact Modeling Sharing
H. Wang, M. Chan
HKUST, HK


ISBN: 978-1-4665-6275-2
Pages: 878
Hardcopy: $209.95