Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Chapter 10:

Compact Modeling

-BSIM6: Symmetric Bulk MOSFET Model
 Y.S. Chauhan, M.A. Karim, S. Venugopalan, S. Khandelwal, A. Niknejad, C. Hu
 University of California, Berkeley, US
-Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model
 C.C. Enz, A. Mangla, M.-A. Chalkiadaki
 Ecole Polytechnique Fédérale de Lausanne (EPFL), CH
-An analytical 2DEG model considering the two lowest subbands
 J. Zhang, X. Zhou
 NTU singapore, SG
-Model the AlGaN/GaN High Electron Mobility Transistors
 Y. Wang
 Tsnghua University, CN
-Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices
 S. Khandelwal, T.A. Fjeldly
 NTNU, NO
-Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
 T. Iizuka, K. Fukushima, A. Tanaka, M. Ueno, M. Miura-Mattausch
 Hiroshima University, JP
-Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow
 F. Ueno, A. Tanaka, M. Miyake, T. Iizuka, T. Yamamoto, H. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch
 Hiroshima University, JP
-Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles
 T.A. Fjeldly, U. Monga
 Norwegian University of Science and Technology, NO
-Discreteness and Distribution of Drain Currents in FinFETs
 N. Lu
 IBM, US
-Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates
 P.K. Thakur, S. Mahapatra
 Indian Institute of Science Bangalore, IN
-Critical review of CNTFET compact models
 M. Claus, M. Haferlach, D. Gross, M. Schröter
 Technische Universität Dresden, DE
-Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor
 R. Narang, M. Saxena, R.S. Gupta, M. Gupta
 University of Delhi South Campus, IN
-Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control
 S. Khandelwal, Y.S. Chauhan, M.A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu
 Norwegian University of Science & Technlogy, NO
-A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs
 X. Zhou, S.B. Chiah
 Nanyang Technological University, SG
-Modeling of Chain History Effect based on HiSIM-SOI
 Y. Fukunaga, M. Miyake, A. Toda, K. Kikuchihara, S. Baba, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
 Hiroshima university, JP
-HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX
 M. Miura-Mattausch, H. Kikuchihara, U. Feldmann, T. Nakagawa, M. Miyake, T. Iizuka, H.J. Mattausch
 Hiroshima University, JP
-Unified Regional Approach to High Temperature SOI DC/AC Modeling
 S.B. Chiah, X. Zhou, Z. Chen, H.M. Chen
 Nanyang Technological University, SG
-A Charge Based Non-Quasi-Static Transient Model for SOI MOSFETs
 J. Zhang, J. He, Y. Ye, H. He, M. Chan
 Peking University, CN
-Field-Based 3D Capacitance Modeling for sub-45-nm On-Chip Interconnect
 A. Zhang, W. Zhao, Y. Ye, J. He, A. Chen, M. Chan
 Beijing University of Aeronautics and Astronautics, CN
-Leakage current in HfO2 stacks: from physical to compact modeling
 L. Larcher, A. Padovani, P. Pavan
 Università di Modena e Reggio Emilia, IT
-On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling
 X. Guan, S. Yu, H.-S.P. Wong
 Stanford University, US
-Correlated statistical SPICE models for High-Voltage LDMOS Transistors based on TCAD statistics
 E. Seebacher, A. Steinmair
 austriamicrosystemsAG, AT
-A Fully Automated Method to Create Monte-Carlo MOSFET Model Libraries for Statistical Circuit Simulations
 J. Wang, H. Trombley, J. Watts, M. Randall, R. Wachnik
 IBM Semiconductor Research and Development Center, US
-Understanding and Modeling Quasi-Static Capacitance-Voltage Characteristics of Organic Thin-Film Transistors
 C. Ucurum, H. Goebel
 Helmut Schmidt University - University of the Federal Armed Forces Hamburg, DE
-Boundary Condition Independence of Cauer RC Ladder Compact Thermal Models
 M. Janicki, T. Torzewicz, Z. Kulesza, A. Napieralski
 Technical University of Lodz, PL
-i-MOS: A Platform for Compact Modeling Sharing
 H. Wang, M. Chan
 HKUST, HK
ISBN:978-1-4665-6275-2
Pages:878
Hardcopy:$209.95
 
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