Nano Science and Technology Institute
Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
 
Chapter 1: Nano Electronics & Photonic Devices
 

A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles

Authors:V.A. Stuchinsky, G.N. Kamaev, M.D. Efremov, S.A. Arzhannikova
Affilation:Institute of Semiconductor Physics, RU
Pages:60 - 63
Keywords:Si nanoparticles, MOS capacitor, tunneling
Abstract:A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.
ISBN:978-1-4665-6275-2
Pages:878
Hardcopy:$209.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map