 | Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Chapter 1: Nano Electronics & Photonic Devices |
A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles | |
| Authors: | V.A. Stuchinsky, G.N. Kamaev, M.D. Efremov, S.A. Arzhannikova |
| Affilation: | Institute of Semiconductor Physics, RU |
| Pages: | 60 - 63 |
| Keywords: | Si nanoparticles, MOS capacitor, tunneling |
| Abstract: | A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles. |
| ISBN: | 978-1-4665-6275-2 |
| Pages: | 878 |
| Hardcopy: | $209.95 |
| Order: | Mail/Fax Form |
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