Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Nano Electronics & Photonic Devices Chapter 1

A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles

Authors: V.A. Stuchinsky, G.N. Kamaev, M.D. Efremov, S.A. Arzhannikova

Affilation: Institute of Semiconductor Physics, Russian Federation

Pages: 60 - 63

Keywords: Si nanoparticles, MOS capacitor, tunneling

Abstract:
A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.


ISBN: 978-1-4665-6275-2
Pages: 878
Hardcopy: $209.95