Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Nano Electronics & Photonic Devices Chapter 1

Highly sensitive organic-inorganic heterojunction flexible photodetectors
J-H Seo, T-Y Oh, J. Park, W. Zhou, B-K Ju, Z. Ma
University of Wisconsin, Madison, US

Nanowire GMR Thin Films for Magnetic Sensors
B. Cox, N. Crews
Louisiana Tech University, US

Inherently Radiation Hardened Electronics: A Examination of III-V Nanowire Transistors and Spin-Based Logic Devices
D. Telesca
Air Force Research Lab (AFRL), US

On the Possibility of Ultra-Low Power Switching in Multilayer Graphene Nanostructures
B. Dellabetta, J. Shumway, M.J. Gilbert
University of Illinois, US

Current Degradation due to electromechanical coupling in GaN HEMT’s
B. Padmanabhan, D. Vasileska, S.M. Goodnick
Arizona State University, US

Improved RF Characteristics of Carbon Nanotube Interconnects with Deposited Tungsten Contacts
A.A. Vyas, F. Madriz, N. Kanzaki, P. Wilhite, J. Tan, T. Yamada, C.Y. Yang
Santa Clara University, US

Print Transferrable Large-Area Broadband Membrane Reflectors by Laser Interference Lithography
J-H Seo, J. Park, D. Zhao, H. Yang, W. Zhou, B-K Ju, Z. Ma
University of Wisconsin-Madison, US

Optimization of the device design technologies for optimum analog/RF performance of Nanoscale DG MOSFETs
R.K. Sharma, M. Bucher
Technical University of Crete, GR

Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-k/Metal Gate Bulk and SOI FinFETs
H-W Su, Y-Y Chen, C-Y Chen, H-W Cheng, H-T Chang, Yiming Li
National Chiao Tung University, TW

Understanding Charge Dynamics in Silicon Dangling Bond Structures for Nanoscale Devices
L. Livadaru, J.L. Pitters, M. Taucer, R.A. Wolkow
University of Alberta / NINT, CA

Investigation of Frequency Dependent Noise Performance Metrices for Gate Electrode Work function Engineered Recessed Channel MOSFET
A. Agarwala, R. Chaujar
Delhi Technological University, IN

The concept of a superconductor of man-made 1D superlattice
A. Inoue
Japan Atomic Energy Agency, JP

Suppression of Variability in Metal Source/Drain SOI MOSFET with Partial Buried Oxide and δ-doping
G.C. Patil, S. Qureshi
Indian Institute of Technology Kanpur, IN

Fabrication and Characterization of of Nanoscale Tellurium Fuses for Long Term Solid State Data Storage
A.C. Pearson, B. Singh, M.R. Linford, B.M. Lunt, R.C. Davis
Brigham Young University, US

Synthesis of ZnO Nanosheets by Exposing Zn Film to Oxygen Plasma at Low Temperatures
J.H. Yoon
Kangwon National University, KR

Dynamical Tunneling in the Systems of Double Quantum Dots and Rings
I. Filikhin, S.G. Matinyan, B. Vlahovic
North Carolina Central University, US

A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles
V.A. Stuchinsky, G.N. Kamaev, M.D. Efremov, S.A. Arzhannikova
Institute of Semiconductor Physics, RU

MIM Capacitors with stacked dielectrics
H. Gopalakrishnan, B.J. Kailath
Indian Institute of Information Technology Design and Manufacturing, Kancheepuram, IN


ISBN: 978-1-4665-6275-2
Pages: 878
Hardcopy: $209.95