Nano Science and Technology Institute
Nanotech 2012 Vol. 1
Nanotech 2012 Vol. 1
Nanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)
Chapter 3: Carbon Nano Structures & Devices

Optimization of Carbon Nanotube Thin-Film Transistor Fabrication

Authors:V. Kayastha, J. Lamb
Affilation:Brewer Science, Inc., US
Pages:240 - 243
Keywords:carbon nanotubes, thin film transistors
Abstract:Carbon nanotube–based thin-film transistors have recently gained much interest from many researchers and customers for their potential in large-area electronic applications, including flexible electronics. Single-walled carbon nanotubes (SWCNTs) possess the ability to offer a high ON/OFF ratio, high mobility and switching speed, and low power consumption. However, these SWCNTs come as a mixture of metallic and semiconducting CNT species. The metallic CNTs can be a source of metallic transport and can short the electrodes, causing significant OFF-state current and making the devices less efficient. Therefore, CNT type density in the TFT channel plays a major role in TFT performance. Besides geometric and dimensional device factors, there are other factors that significantly affect CNT-TFT performance. Those factors include the dielectric material, electrode material, and CNT-electrode configuration. A better dielectric material with optimized dielectric film thickness offers a better gating effect, while a better electrode material and CNT-electrode configuration offer ohmic contact and a lower Schottky barrier between CNT channel and the metal electrodes. In this presentation, we will discuss these practical aspects of fabricating CNT-TFTs as well as our efforts to optimize device dimensions and variables to fabricate high-performance CNT-TFTs.
Order:Mail/Fax Form
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map