Nanotech 2012 Vol. 1
Nanotech 2012 Vol. 1
Nanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)

Nanostructured Materials & Devices Chapter 10

AuxAg1-x alloy seeds: A way to control growth, morphology and defect formation in Ge nanowiress

Authors: S. Biswas, J.D. Holmes

Affilation: University College Cork, Ireland

Pages: 749 - 752

Keywords: Ge, nanowire, transmission electron microscopy

Ge nanowires are of current interest for high speed nanoelectronic devices due to the lower band gap and high carrier mobility and larger excitonic Bohr radius of Ge yields a more pronounced quantum confinement effect.Most common way for the growth of Ge nanowires is to use Liquid (such as Au) or a solid (such as Ag, Ni, Cu) growth promoters in a bottom-up approach which allow control of the aspect ratio, diameter, and structure of 1D crystals via external parameters, such as precursor feedstock, temperature, and operating pressure. Here in this work we have used a super critical fluid-solid-solid (SFSS) approach to grow Ge nanowire from AuxAg1-x colloidal seed particles below the eutectic temperature for Ag-Au-Ge ternary system. We have incorporated different amount of Au in silver seed particle to change the parameters in Ag-Au-Ge ternary system to internally control the growth kinetics of nanowires. Change in Tammann temperature and stacking fault energy of nanoparticles by Au incorporation in silver have been utilized to grow very thin (average diameter 6±2 nm) nanowires and also to control the induced crystal defects (mainly in the form of radial twins) by epitaxial transformation from seed particles to nanomaterials.

ISBN: 978-1-4665-6274-5
Pages: 804
Hardcopy: $209.95