Authors: C-S Choi, J-H Yoon
Affilation: Kangwon National University, Korea
Pages: 753 - 756
Keywords: silica nanowires
we report that the SiOx NWs can be synthesized by directly exposing Zn film to atomic oxygen and silicon plasma mixture produced by PECVD method using a mixture of SiH4 and N2O gas at temperatures below 400 oC. SiOx NWs, which were synthesized using a mixture ratio of N2O/SiH4=0.3 and 300 nm Zn film at 380 oC, show uniform diameter of about 200 nm. EDS measurements indicate that the atomic concentration of silicon and oxygen in the NWs is approximately 45 at.% and 46 at.%, respectively. It is also shown that the PL peak appears at around 550 nm, which is a feature generally observed for the amorphous silica. The growth mechanism for SiOx NWs will be presented.