A Regional Model for Threshold Switching in Phase Change Memory

	Nanotech 2011 Vol. 2 Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 9: Nano & Micro: Computational Methods, Simulation & Software Tools
	A Regional Model for Threshold Switching in Phase Change Memory
Authors:	L. Wang
Affilation:	Peking University Shenzhen Graduate Schoo, CN
Pages:	615 - 618
Keywords:	phase change memory, Ovonic threshold switch, space charge effect, scaling trend
Abstract:	In this paper, a regional model for threshold switching is presented based on the space charge effect in Phase Change Memory (PCM). In this model, the PCM unit is divided into two parts according to the electric field distribution resulted from the space charge effect. Then the field and voltage in each part are calculated separately in detail and the total voltage is the sum of the two partial voltages. The physics of threshold switching is explained based on the field distribution under different current. This paper also provides the scaling trend with this model: the threshold voltage (Vth) varies directly with the thickness of phase change material (L), while the threshold current (Ith) changes conversely with L; which is consistent with the reported data.
ISBN:	978-1-4398-7139-3
Pages:	854
Hardcopy:	$199.95

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