Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Nano & Micro: Computational Methods, Simulation & Software Tools Chapter 9

Advanced physics for simulation of ultrascaled devices with UTOXPP Solver

Authors: D. Garetto, D. Rideau, C. Tavernier, Y. Leblebiciand, A. Schmid, H. Jaouen

Affilation: IBM corp., France

Pages: 607 - 610

Keywords: Poisson–Schroedinger model, full–band model, TCAD modeling

As the conventional scaling down of MOSFET dimensions faces physical and economical limits, the performances of novel solutions such as high-K dielectrics, mechanical strain and substrate orientation or alternative device structures, such as fully-depleted SOI devices, must be evaluated within the perspective of an industrial integration. The effects of these technological boosters on channel mobility and gate leakage must be clearly quantified. A successful modeling approach should combine conventional TCAD simulation tools with physically-based models. A series of state-of-the-art physically-based models featuring band structure effects, advanced tunneling models, and mobility calculation has been implemented into a 1D Poisson-Schroedinger solver (UTOXPP) together with a Qt-based graphical user interface. The effects of the full-band k.p structure of Si-Ge-C material alloys, heterostructure and strain on the electrostatics and quantum transport can be investigated with such a model. A multiphonon non-radiative trapping model is used for studying the effects of interface and oxide defects on device reliability and trap assisted tunneling on nanoscale and memory devices.

Advanced physics for simulation of ultrascaled devices with UTOXPP Solver

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95