Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 9: Nano & Micro: Computational Methods, Simulation & Software Tools

Advanced physics for simulation of ultrascaled devices with UTOXPP Solver

Authors:D. Garetto, D. Rideau, C. Tavernier, Y. Leblebiciand, A. Schmid, H. Jaouen
Affilation:IBM corp., FR
Pages:607 - 610
Keywords:Poisson–Schroedinger model, full–band model, TCAD modeling
Abstract:As the conventional scaling down of MOSFET dimensions faces physical and economical limits, the performances of novel solutions such as high-K dielectrics, mechanical strain and substrate orientation or alternative device structures, such as fully-depleted SOI devices, must be evaluated within the perspective of an industrial integration. The effects of these technological boosters on channel mobility and gate leakage must be clearly quantified. A successful modeling approach should combine conventional TCAD simulation tools with physically-based models. A series of state-of-the-art physically-based models featuring band structure effects, advanced tunneling models, and mobility calculation has been implemented into a 1D Poisson-Schroedinger solver (UTOXPP) together with a Qt-based graphical user interface. The effects of the full-band k.p structure of Si-Ge-C material alloys, heterostructure and strain on the electrostatics and quantum transport can be investigated with such a model. A multiphonon non-radiative trapping model is used for studying the effects of interface and oxide defects on device reliability and trap assisted tunneling on nanoscale and memory devices.
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