Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 9: Nano & Micro: Computational Methods, Simulation & Software Tools

A Drift-Diffusion Model of Pinned Photodiode Enabling Opto-Electronic Circuit Simulation

Authors:S. Mei
Affilation:Peking University Shenzhen Graduate School, CN
Pages:682 - 685
Keywords:drift-diffussion model, pinned photodiode, CMOS image sensor
Abstract:A drift-diffusion analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.
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