Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Nano & Micro: Computational Methods, Simulation & Software Tools Chapter 9

A Drift-Diffusion Model of Pinned Photodiode Enabling Opto-Electronic Circuit Simulation

Authors: S. Mei

Affilation: Peking University Shenzhen Graduate School, China

Pages: 682 - 685

Keywords: drift-diffussion model, pinned photodiode, CMOS image sensor

Abstract:
A drift-diffusion analytical model with bounded boundary conditions for CMOS Image Sensor (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.

A Drift-Diffusion Model of Pinned Photodiode Enabling Opto-Electronic Circuit Simulation

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95