Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 9: Nano & Micro: Computational Methods, Simulation & Software Tools

The role of Electromechanical coupling in AlGaN/AlN/GaN HEMTs

Authors:B. Padmanabhan, D. Vasileska, S.M. Goodnick
Affilation:Arizona State University, US
Pages:679 - 681
Keywords:GaN HEMTs, electromechanical coupling
Abstract:we present simulation results for GaN HEMTs in which the structure has additional AlN spacer layer thus completely modifying the electromechanical coupling approach.
The role of Electromechanical coupling in AlGaN/AlN/GaN HEMTsView PDF of paper
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