Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Nano & Micro: Computational Methods, Simulation & Software Tools Chapter 9

Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application

Authors: H. Abebe, E. Cumberbatch

Affilation: USC, United States

Pages: 643 - 646

Keywords: CNTFET, device modeling, device simulation, TCAD

Abstract:
A 2-D channel electrostatic potential model of CNTFET is presented. The model is developed by directly solving Laplace’s equation in cylindrical coordinates with appropriate boundary conditions. To the best of our knowledge, the Technology Computer Aided Design (TCAD) tool vendors have not provided models for CNT devices yet for the purpose of 2-D and 3-D device simulations. We believe the model presented in this paper can be useful for TCAD application.

Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95