Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application

	Nanotech 2011 Vol. 2 Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 9: Nano & Micro: Computational Methods, Simulation & Software Tools
	Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application
Authors:	H. Abebe, E. Cumberbatch
Affilation:	USC, US
Pages:	643 - 646
Keywords:	CNTFET, device modeling, device simulation, TCAD
Abstract:	A 2-D channel electrostatic potential model of CNTFET is presented. The model is developed by directly solving Laplace’s equation in cylindrical coordinates with appropriate boundary conditions. To the best of our knowledge, the Technology Computer Aided Design (TCAD) tool vendors have not provided models for CNT devices yet for the purpose of 2-D and 3-D device simulations. We believe the model presented in this paper can be useful for TCAD application.
ISBN:	978-1-4398-7139-3
Pages:	854
Hardcopy:	$199.95

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