Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Advanced Packaging and Compound Semiconductors Chapter 6

Thin film transistors with printed semiconductive oxide channel and silver source-drain electrodes

Authors: Z. Chen, Z. Cui

Affilation: Suzhou Institute of Nano-tech and Nano-bonic, Chinese Academy of Sciences, China

Pages: 441 - 444

Keywords: transistor, printed, TOS

Abstract:
In order to make all-printed thin-film transistors, the key issue such as the interfacing effect between printed electrodes and printed semiconductive channel layer has to be solved.In this study, thin film transistors were fabricated by inkjet printing of both semiconductive oxide channel and silver source-drain electrodes.A bottom-gate/top-contact configuration was utilized to avoid degradation of silver electrode conductivity. The morphology of printed semiconductive oxide channel depends on the volatility of solvent and has a great influence on the performance of the thin film transistor. Other factors influencing the performance include the composition ratio of oxide ink and layer thickness. Detailed studies are presented in the paper.

Thin film transistors with printed semiconductive oxide channel and silver source-drain electrodes

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95