Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 6: Advanced Packaging and Compound Semiconductors

Thin film transistors with printed semiconductive oxide channel and silver source-drain electrodes

Authors:Z. Chen, Z. Cui
Affilation:Suzhou Institute of Nano-tech and Nano-bonic, Chinese Academy of Sciences, CN
Pages:441 - 444
Keywords:transistor, printed, TOS
Abstract:In order to make all-printed thin-film transistors, the key issue such as the interfacing effect between printed electrodes and printed semiconductive channel layer has to be solved.In this study, thin film transistors were fabricated by inkjet printing of both semiconductive oxide channel and silver source-drain electrodes.A bottom-gate/top-contact configuration was utilized to avoid degradation of silver electrode conductivity. The morphology of printed semiconductive oxide channel depends on the volatility of solvent and has a great influence on the performance of the thin film transistor. Other factors influencing the performance include the composition ratio of oxide ink and layer thickness. Detailed studies are presented in the paper.
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