Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Micro & Nano Reliability Chapter 3

An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current

Authors: C. Zhang

Affilation: Peking University, China

Pages: 180 - 183

Keywords: interface trap, gate oxide trap, subthreshold current, MOSFET reliability

Abstract:
In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift in the semi-log plotted transfer characteristics, while interface trap influences subthreshold slope of the device. The above theory is verified by ISE-Dessis simulation. The results demonstrate that this method is effective and accurate for extracting parameters of devices with gate length less than 1μm.

An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95