An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current

	Nanotech 2011 Vol. 2 Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational Chapter 3: Micro & Nano Reliability
	An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current
Authors:	C. Zhang
Affilation:	Peking University, CN
Pages:	180 - 183
Keywords:	interface trap, gate oxide trap, subthreshold current, MOSFET reliability
Abstract:	In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift in the semi-log plotted transfer characteristics, while interface trap influences subthreshold slope of the device. The above theory is verified by ISE-Dessis simulation. The results demonstrate that this method is effective and accurate for extracting parameters of devices with gate length less than 1μm.
ISBN:	978-1-4398-7139-3
Pages:	854
Hardcopy:	$199.95

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