Authors: C. Zhang
Affilation: Peking University, China
Pages: 180 - 183
Keywords: interface trap, gate oxide trap, subthreshold current, MOSFET reliability
In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift in the semi-log plotted transfer characteristics, while interface trap influences subthreshold slope of the device. The above theory is verified by ISE-Dessis simulation. The results demonstrate that this method is effective and accurate for extracting parameters of devices with gate length less than 1μm.